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Enhanced Anomalous Nernst Effect in the Ferromagnetic Kondo Lattice CeCo2As2

Published 20 Apr 2026 in cond-mat.str-el | (2604.17987v1)

Abstract: The anomalous Nernst effect (ANE), generating a voltage perpendicular to a temperature gradient due to magnetization, is closely linked to the Berry curvature (BC) near the Fermi energy in topological magnets. We report an enhanced spontaneous ANE in the ferromagnetic Kondo lattice CeCo2As2, which features Kondo-screened cerium-based 4f moments embedded in a ferromagnetic d-electron framework. The observed large anomalous Nernst coefficient, greater than the Seebeck coefficient, is attributed to the strong BC present in the f-orbital-dominated flat bands. The enhanced ANE in CeCo2As2 serves as a signature of the Fermi energy pinning within the topological flat band, highlighting the correlation-driven topology in the Kondo lattice.

Summary

  • The paper demonstrates that Kondo-driven f-d hybridization and Berry curvature produce an exceptionally high anomalous Nernst effect in CeCo₂As₂.
  • Detailed experiments and DFT+DMFT analyses reveal record Nernst angles and enhanced thermoelectric coefficients compared to conventional ferromagnetic metals.
  • The findings underscore the potential of flat-band topology and Kondo pinning for advancing thermoelectric and spintronic device applications.

Enhanced Anomalous Nernst Effect in the Ferromagnetic Kondo Lattice CeCo₂As₂

Introduction

The paper "Enhanced Anomalous Nernst Effect in the Ferromagnetic Kondo Lattice CeCo₂As₂" (2604.17987) presents a detailed investigation of the anomalous Nernst effect (ANE) in CeCo₂As₂, a ferromagnetic (FM) Kondo lattice compound, and its non-$4f$ analogue LaCo₂As₂. The study integrates comprehensive experimental measurements with theoretical modeling, demonstrating that the Kondo effect and the associated ff-dd band hybridization in CeCo₂As₂ result in an exceptionally large ANE, exceeding the Seebeck coefficient and culminating in anomalous Nernst angles (tanθAN\tan\theta_\mathrm{AN}) far beyond what is seen in conventional FM metals. The interplay between Berry curvature (BC), Kondo screening, and band topology is elucidated using DFT+DMFT and tight-binding analyses.

Experimental Characterization of Thermoelectric and Magnetic Properties

Single crystalline samples of CeCo₂As₂ and LaCo₂As₂ were synthesized to enable comparative magnetization, transport, and thermoelectric property measurements. CeCo₂As₂ presents a pronounced enhancement in electronic specific heat (γ=78 mJ mol1 K2\gamma = 78~\mathrm{mJ~mol}^{-1}~\mathrm{K}^{-2}), approximately triple that of LaCo₂As₂, signifying the heavy-fermion (HF) character and increased carrier effective mass due to Kondo screening. Resistivity and thermopower measurements reflect a broad coherence maximum and positive Seebeck coefficient (SxxS_{xx}) peak, hallmarks of Kondo lattice physics, while LaCo₂As₂ maintains typical metallic behavior and negative thermopower. Figure 1

Figure 1: Magnetization, specific heat, and transport properties of CeCo₂As₂ and LaCo₂As₂, highlighting the FM Kondo lattice characteristics and schematic depiction of ANE and Seebeck setup.

Both compounds undergo FM ordering with TCT_\mathrm{C} well above 100 K, and magnetization measurements confirm comparable saturated moment and cc-axis easy axis. The lower TCT_\mathrm{C} of CeCo₂As₂ relative to its coherence temperature implies collective Kondo hybridization within the FM phase.

Anomalous Nernst and Hall Effects: Strong Enhancement in CeCo₂As₂

Hall resistivity (ρyx\rho_{yx}) and Nernst signal (ff0) were measured as functions of temperature and magnetic field for both materials. The anomalous contributions, ff1 and ff2, are quantitatively larger in CeCo₂As₂ by over an order of magnitude relative to LaCo₂As₂, illustrating the pronounced influence of band topology and Kondo physics. Figure 2

Figure 2: Field-dependent magnetization, Hall resistivity, and Nernst coefficients for CeCo₂As₂ and LaCo₂As₂, showing significant enhancement of anomalous contributions in CeCo₂As₂.

The temperature dependence reveals that CeCo₂As₂ achieves a maximal anomalous Hall conductivity (ff3) of 710~ff4~cmff5 and peak ANE (ff6) of ff7V~Kff8 near 40 K. These values are competitive with leading topological magnets (e.g., Co₂MnGa, Co₃Sn₂S₂) and vastly exceed conventional FM metals, for which ff9 is typically <1%. Notably, the anomalous Nernst angle in CeCo₂As₂ surpasses 100% below 30 K, reaching 144% at 3 K; this ratio remains below 50% in most other topological magnets. Figure 3

Figure 3: Summary of anomalous Nernst angle (dd0) and scaling relations in CeCo₂As₂ and comparative topological systems.

Analysis of dd1 normalized by magnetization and scaling with dd2 confirms the predominantly intrinsic BC-driven mechanism, with negligible extrinsic skew scattering, reflecting the topological origin of the effect.

Origin of Enhanced ANE: Band Structure, Berry Curvature, and Kondo Pinning

DFT+DMFT calculations elucidate the electronic structure of CeCo₂As₂ and LaCo₂As₂. CeCo₂As₂ possesses flat Kondo bands just above dd3, absent in LaCo₂As₂, which significantly increase the density of states (DOS) and thermopower. Tight-binding models identify multiple dd4-dd5 hybridization gaps and Weyl nodes in close proximity to dd6, distributing strong BC across narrow energy windows, thereby amplifying intrinsic AHE and ANE. Figure 4

Figure 4: DFT+DMFT band structures, tight-binding model, Berry-curvature-resolved bands, and anomalous transport coefficients in CeCo₂As₂ and LaCo₂As₂.

Calculated dd7 and dd8 at dd9 and tanθAN\tan\theta_\mathrm{AN}0 meV align quantitatively with experimental values, supporting the BC hot-zone scenario driven by Kondo pinning. Analysis of the tanθAN\tan\theta_\mathrm{AN}1 temperature dependence and fitting to a Sommerfeld expansion reveals a small chemical potential for CeCo₂As₂ (tanθAN\tan\theta_\mathrm{AN}2 K), comparable to the coherence temperature, supporting low Fermi temperature-enhanced thermoelectric response and breakdown of the linear Mott relation at elevated temperatures.

Theoretical Implications and Flat-Band Quantum Thermoelectricity

Intrinsic BC mechanisms underpin both AHE and ANE, with their ratio governed by the Mott relation and sensitive to tanθAN\tan\theta_\mathrm{AN}3 tuning in BC hot-zones. The large tanθAN\tan\theta_\mathrm{AN}4 and ratio tanθAN\tan\theta_\mathrm{AN}5 at low temperatures are signatures of flat-band topology, Kondo pinning, and strong BC distribution. The FM Kondo lattice structure yields a time-reversal symmetry-broken flat band, naturally enhancing topological thermoelectric effects, distinct from conventional tanθAN\tan\theta_\mathrm{AN}6-electron ferromagnets. Figure 5

Figure 5: Schematic comparison of spin configuration, DOS, and anomalous transport in itinerant FM versus FM Kondo lattice, emphasizing flat-band effects.

The results imply that correlated topological Kondo magnets, with Fermi level pinned to flat bands by Kondo hybridization, are highly promising for thermoelectric applications, surpassing the need for chemical doping or fine-tuning in conventional topological magnets. The findings also resonate with recent advances in noncentrosymmetric Kondo semimetals, broadening the landscape of BC-driven quantum transport phenomena.

Conclusion

This investigation demonstrates that CeCo₂As₂, a ferromagnetic Kondo lattice, exhibits an exceptionally strong anomalous Nernst effect—surpassing both Seebeck coefficients and conventional FM metals—due to band topology and Kondo-driven flat band formation yielding pronounced Berry curvature near tanθAN\tan\theta_\mathrm{AN}7. The study substantiates the theoretical framework for topological thermoelectricity in correlated flat-band systems and suggests that the practical exploitation of Kondo lattices for efficient thermoelectric devices is achievable, especially in scenarios requiring large BC and low tanθAN\tan\theta_\mathrm{AN}8 pinning. Future directions include harnessing similar mechanisms in other correlated and topological materials, and leveraging band engineering to optimize thermoelectric and spintronic device performance.

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